Micron Memory Malaysia Sdn Bhd
Senior Foundry Interface Design Engineer- HBM
Micron Memory Malaysia Sdn Bhd, Folsom, California, United States, 95630
Our vision is to transform how the world uses information to enrich life for
all .Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.Our Opportunity Summary:For more than 43 years, Micron Technology, Inc. has redefined innovation with the world’s most advanced memory and semiconductor technologies. We’re an international team of visionaries and scientists, developing groundbreaking technologies that are transforming how the world uses information to enrich life.In our hybrid role , you will be part of the HBM Design Architecture team and provide technology support for the design & development of next-generation HBM DRAM products. You will be part of a highly multi-functional team of technical subject matter experts collaborating closely with a global team of Design Engineering, Product Engineering, Process Development, Package Engineering & Business Units to execute to a common goal of ensuring our future HBM roadmap is successful. You will interface between the internal design teams and external foundries (and internal Technology development teams) to understand and analyze technology/design bottlenecks and help design architects to propose innovative architectures to target best-in-class performance, power, cost, reliability, and quality for Micron’s HBM product portfolio.Our team vision is a continuing desire to develop your skills working in an inclusive diverse environment of multicultural Teams across worldwide geographies! Enabling the creative career path you deserve with a collaborative environment, and groundbreaking technology while rapidly growing your abilities.In HBM DEG (High Bandwidth Memory, DRAM Engineering Group), we innovate and integrate end-to-end groundbreaking front-end and backend processes with design, debugging various tests, and qualification techniques to develop the lowest power per bit solutions to improve customer experience in the field of ML (Machine Learning) and AI (Artificial Intelligence). The success of a sophisticated product such as HBM relies vastly on vertical integration and the various engineering working in unison. To provide greater detail, our HBM technology pertains to stacking numbers of DRAM chips along with a logic chip within one package through an assembly technology called TSV (Through Silicon Via). This greatly increases the memory density in a package, while allowing very high-speed signal transmission. Furthermore, "high bandwidth"; is an outstanding memory design area where custom gate-level design and RTL style logic design are blended into the same product, and most of the DDR or LPDDR design is based on the gate-level design only. Lastly, verification and testing (validation) of HBM is the most ambitious due to the total size of the design and complexity of the functions, and in addition to craft, many innovations are needed for verification and validation of the HBM product, thereby making it uniquely exciting.Responsibilities include but are not limited to:Focused, self-motivated semiconductor foundry interface engineer providing strategic and technical leadership across the semiconductor industry involving wafer foundries and fabless design houses.Use foundry technology process design kits (PDKs) of advanced FinFET and GAA nodes to come up with design guidelines for power/performance optimization.Study and analyze Foundry Technology to provide guidelines to design team to improve power/performance/area and reliability.Participate in new architecture development for upcoming and future HBM base Die design through Design Technology Co-optimization involving std cells and BEOL options.Define Reliability specifications for DRAM and Base Die through cross-functional collaboration to meet the product needs.Use statistical computation/modeling/scripting tools for data analysis.Engage with Customers to support issues with current HBM architectures and identify opportunities to innovate on future HBM solutions.Yield and reliability analysis, process flow and integration development, product design, and testing optimization to accelerate advanced CMOS technology qualification and mass production ramp-up.Pathfinding to explore new architectures for future HBM products and make recommendations after performing a highly technical feasibility analysis.Qualifications:BSEE or greater5+ years of experience technically contributing in the relevant Design/Technology engineering roles.Experience working with Foundry Technology PDKs preferably advanced FinFET nodes.Experience with EDA tools and design automation etc. with experience in CMOS circuit design. Familiarity with the fundamental concepts associated with parasitic extraction, physical verification, circuit simulation, and reliability verification.Understanding of compact device models and aging models is a plus.Solid experience in automation using Python or equivalent scripting language is highly encouraged.Good understanding of Process Technology and device physics of advanced CMOS device architecture (FinFET and GAA).Good verbal and written communication skills with the ability to effectively synthesize and convey complex technical concepts to other partners and leadership.Strong track record of innovation and problem-solving in high-performance memory development.(Disclaimer):
While you may not exhibit all the characteristics/skills listed above today, we are highly interested in a teammate who is motivated to grow in technical breadth and depth. Suppose you are open to learning while being a valued member of a team of world-class engineers. In that case, we are determined to help build upon your existing foundation, while focusing on your individual and collaborative skills in this exciting and outstanding opportunity.The US base salary range that Micron Technology estimates it could pay for this full-time position is: $133,000.00 - $227,000.00Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.To learn more about Micron, please visit
micron.com/careers
#J-18808-Ljbffr
all .Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.Our Opportunity Summary:For more than 43 years, Micron Technology, Inc. has redefined innovation with the world’s most advanced memory and semiconductor technologies. We’re an international team of visionaries and scientists, developing groundbreaking technologies that are transforming how the world uses information to enrich life.In our hybrid role , you will be part of the HBM Design Architecture team and provide technology support for the design & development of next-generation HBM DRAM products. You will be part of a highly multi-functional team of technical subject matter experts collaborating closely with a global team of Design Engineering, Product Engineering, Process Development, Package Engineering & Business Units to execute to a common goal of ensuring our future HBM roadmap is successful. You will interface between the internal design teams and external foundries (and internal Technology development teams) to understand and analyze technology/design bottlenecks and help design architects to propose innovative architectures to target best-in-class performance, power, cost, reliability, and quality for Micron’s HBM product portfolio.Our team vision is a continuing desire to develop your skills working in an inclusive diverse environment of multicultural Teams across worldwide geographies! Enabling the creative career path you deserve with a collaborative environment, and groundbreaking technology while rapidly growing your abilities.In HBM DEG (High Bandwidth Memory, DRAM Engineering Group), we innovate and integrate end-to-end groundbreaking front-end and backend processes with design, debugging various tests, and qualification techniques to develop the lowest power per bit solutions to improve customer experience in the field of ML (Machine Learning) and AI (Artificial Intelligence). The success of a sophisticated product such as HBM relies vastly on vertical integration and the various engineering working in unison. To provide greater detail, our HBM technology pertains to stacking numbers of DRAM chips along with a logic chip within one package through an assembly technology called TSV (Through Silicon Via). This greatly increases the memory density in a package, while allowing very high-speed signal transmission. Furthermore, "high bandwidth"; is an outstanding memory design area where custom gate-level design and RTL style logic design are blended into the same product, and most of the DDR or LPDDR design is based on the gate-level design only. Lastly, verification and testing (validation) of HBM is the most ambitious due to the total size of the design and complexity of the functions, and in addition to craft, many innovations are needed for verification and validation of the HBM product, thereby making it uniquely exciting.Responsibilities include but are not limited to:Focused, self-motivated semiconductor foundry interface engineer providing strategic and technical leadership across the semiconductor industry involving wafer foundries and fabless design houses.Use foundry technology process design kits (PDKs) of advanced FinFET and GAA nodes to come up with design guidelines for power/performance optimization.Study and analyze Foundry Technology to provide guidelines to design team to improve power/performance/area and reliability.Participate in new architecture development for upcoming and future HBM base Die design through Design Technology Co-optimization involving std cells and BEOL options.Define Reliability specifications for DRAM and Base Die through cross-functional collaboration to meet the product needs.Use statistical computation/modeling/scripting tools for data analysis.Engage with Customers to support issues with current HBM architectures and identify opportunities to innovate on future HBM solutions.Yield and reliability analysis, process flow and integration development, product design, and testing optimization to accelerate advanced CMOS technology qualification and mass production ramp-up.Pathfinding to explore new architectures for future HBM products and make recommendations after performing a highly technical feasibility analysis.Qualifications:BSEE or greater5+ years of experience technically contributing in the relevant Design/Technology engineering roles.Experience working with Foundry Technology PDKs preferably advanced FinFET nodes.Experience with EDA tools and design automation etc. with experience in CMOS circuit design. Familiarity with the fundamental concepts associated with parasitic extraction, physical verification, circuit simulation, and reliability verification.Understanding of compact device models and aging models is a plus.Solid experience in automation using Python or equivalent scripting language is highly encouraged.Good understanding of Process Technology and device physics of advanced CMOS device architecture (FinFET and GAA).Good verbal and written communication skills with the ability to effectively synthesize and convey complex technical concepts to other partners and leadership.Strong track record of innovation and problem-solving in high-performance memory development.(Disclaimer):
While you may not exhibit all the characteristics/skills listed above today, we are highly interested in a teammate who is motivated to grow in technical breadth and depth. Suppose you are open to learning while being a valued member of a team of world-class engineers. In that case, we are determined to help build upon your existing foundation, while focusing on your individual and collaborative skills in this exciting and outstanding opportunity.The US base salary range that Micron Technology estimates it could pay for this full-time position is: $133,000.00 - $227,000.00Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.To learn more about Micron, please visit
micron.com/careers
#J-18808-Ljbffr